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low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 1 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited general description the az431l series ics are low voltage three-terminal adjustable regulators with guaranteed thermal stability over a full operation range. these ics feature sharp turn-on characteristics, lo w temperature coefficient and low output impedance, which make them ideal substitutes for zener diodes in applications such as switching power supply, charger, motherboard and other adjustable regulators. the output voltage can be set to any value between 1.24v and 18v with two external resistors. the az431l precision reference is offered in two volt- age tolerance: 0.5% and 1.0%. these ics are available in 4 packages: to-92 (bulk or ammo packing), sot-23, sot-23-5 and sot-89. features wide programmable precise output voltage from 1.24v to 18v high stability under capacitive load low temperature deviation: 3mv typical low equivalent full-range temperature coeffi- cient: 20ppm/ o c typical low dynamic output resistance: 0.05 ? typical high sink current capacity from 0.1ma to 100ma low output noise wide operating range of -40 to 125 o c applications graphic card pc motherboard voltage adapter switching power supply charger figure 1. package types of az431l sot-23 to-92(bulk packing) sot-89 sot-23-5 to-92(ammo packing)
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 2 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited note 1: pin 2 is attached to substrate and must be connected to anode or open figure 2. pin configuration of az431l (top view) z package (to-92(bulk packing)) (sot-23) n package r package (sot-89) figure 3. functional block diagram of az431l functional block diagram k package (sot-23-5) ref v ref cathode anode + - pin configuration z package (to-92(ammo packing)) anode ref cathode 3 2 1 cathode anode ref 1 2 3 cathode anode ref 1 2 3 nc anode ref 1 2 34 5 ref anode cathode 1 23 * (note 1) * cathode
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 3 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited ordering information circuit type voltage tolerance b: 1.0% a: 0.5% g1: green az431l - package temperature range voltage tolerance part number marking id packing type lead free green lead free green to-92 -40 to 125 o c 0.5% az431laz-e1 az431laz-g1 az431laz-e1 az431laz-g1 bulk 0.5% az431laztr-e1 az431laztr-g1 az431laz-e1 az431laz-g1 ammo 1.0% az431lbz-e1 az431lbz-g1 az431lbz-e1 az431lbz-g1 bulk 1.0% az431lbztr-e1 AZ431LBZTR-G1 az431lbz-e1 az431lbz-g1 ammo sot-23 -40 to 125 o c 0.5% az431lantr-e1 az431lantr-g1 ea6 ga6 tape & reel 1.0% az431lbntr-e1 az431lbntr-g1 ea7 ga7 tape & reel sot-23-5 -40 to 125 o c 0.5% az431laktr-e1 az431laktr-g1 e5a g5a tape & reel 1.0% az431lbktr-e1 az431lbktr-g1 e6a g6a tape & reel sot-89 -40 to 125 o c 0.5% az431lartr-e1 az431lartr-g1 e41a g41a tape & reel 1.0% az431lbrtr-e1 az431lbrtr-g1 e41b g41b tape & reel package z: to-92 tr: tape and reel or ammo blank: bulk n: sot-23 k: sot-23-5 r: sot-89 e1: lead free bcd semiconductor's pb-free produc ts, as designated with "e1" suffix in the part number, are rohs compliant. products with "g1" suffix are available in green packages.
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 4 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited parameter symbol value unit cathode voltage v ka 20 v cathode current range (continuous) i ka -100 to 100 ma reference input current range i ref 10 ma power dissipation p d z, r package 770 mw n, k package 370 junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c note 2: stresses greater than those listed under "absolute maximum ratings" may cause permanent damage to the device. these are stress ratings only , and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating cond itions" is not implied. exposure to "absolute maxi- mum ratings" for extended periods may affect device reliability. parameter symbol min max unit cathode voltage v ka v ref 18 v cathode current i ka 0.1 100 ma operating ambient temperature range -40 125 o c recommended operating conditions absolute maximum ratings (note 2)
data sheet 5 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited low voltage (1.24v) adjustable precision shunt regulator az431l parameter test circuit symbol conditions min typ max unit reference voltage 0.5% 4 v ref v ka =v ref, i ka =10ma 1.234 1.240 1.246 v 1.0% 1.228 1.240 1.252 deviation of re ference voltage over full temperature range 4 ? v ref v ka =v ref i ka =10ma 0 o c to 70 o c 2 10 mv -40 o c to 85 o c 310 -40 o c to 125 o c 415 ratio of change in v ref to the change in cathode voltage 5 ? v ref ? v ka i ka =10ma, ? v ka :v ref to 16v -0.5 -1.5 mv/v reference input current 5 i ref i ka =10ma, r1=10k ? , r2= 0.15 0.4 a deviation of reference current over full temperature range 5 ? i ref i ka =10ma, r1=10k ? , r2= t a =-40 to 125 o c 0.1 0.4 a minimum cathode current for regulation 4 i ka (min) v ka =v ref 55 80 a off-state cathode current 6 i ka (off) v ref =0, v ka =18v 0.04 0.10 a v ka =6, v ref =0 0.01 0.05 dynamic impedance 4 z ka v ka =v ref , i ka =1 to 100ma f 1.0khz 0.05 0.15 ? thermal resistance jc sot-23 84.84 o c/w sot-23-5 84.84 to-92 140.80 sot-89 88.00 (operating conditions: t a =25 o c, unless otherwise noted.) electrical characteristics
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 6 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited figure 4. test circuit 4 for v ka =v ref figure 5. test circuit 5 for v ka >v ref figure 6. test circuit 6 for i off i off v in v ka v in v ka i ka r1 r2 v ref v ka =v ref *(1+r1/r2)+ i ref *r1 i ref r3 v in v ka r1 i ka v ref electrical characteristics (continued)
data sheet 7 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited low voltage (1.24v) adjustable precision shunt regulator az431l figure 7. reference voltage vs. ambient temperature figure 8. reference current vs. ambient temperature figure 9. cathode current vs. cathode voltage figure 10. cathode current vs. cathode voltage -50 -25 0 25 50 75 100 125 150 1.235 1.236 1.237 1.238 1.239 1.240 1.241 1.242 reference voltage (v) ambient temperature ( o c) v ka =v ref i ka =10ma -50 -25 0 25 50 75 100 125 0.12 0.13 0.14 0.15 0.16 0.17 0.18 r1=10k ? r2=infinite i ka =10ma ambient temperature ( o c) reference current ( a) -1 0 1 -150 -100 -50 0 50 100 150 cathode current (ma) cathode voltage (v) v ka =v ref t a =25 o c -1 0 1 -300 -200 -100 0 100 200 300 400 cathode current ( a) cathode voltage (v) v ka =v ref t a =25 o c typical performance characteristics
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 8 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited figure 11. small signal voltage gain vs. frequency 10 f 4.3k 6.8k i ka output 360 gnd 5v 1k 10k 100k 1m 0.01 0.1 1 10 i ka =1ma to 100ma dynamic impedance ( ? ) frequency (hz) figure 12. dynamic impedance vs. frequency gnd output 50 ? 100 ? i ka typical performance ch aracteristics (continued) 1k 10k 100k -10 0 10 20 30 40 50 60 70 voltage gain (db) small signal frequency (hz) t a =25 0 c i ka =10ma
data sheet 9 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited low voltage (1.24v) adjustable precision shunt regulator az431l figure 13. pulse response of input and output voltage pulse generator f=100khz r2 50 ? output gnd r1 1.8k ? -40-20 0 20406080100120 -0.55 -0.50 -0.45 -0.40 -0.35 -0.30 i ka =10ma ? v ka =v ref to 16v ratio of ? v ref to ? v ka (mv/v) ambient temperature ( o c) figure 14. ratio of delta reference voltage to the ratio of cathode voltage vs. ambient temperature typical performance ch aracteristics (continued) -10123456 0 1 2 3 input input and output voltage (v) time ( s) output
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 10 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited figure 15. shunt regulator figure 16. high current shunt regulator v out =(1+r1/r2)*v ref v out =(1+r2/r3)*v ref i out =v ref /r2+i ka v in v out r1 r2 v ref az431l r3 i out v in az431l r2 r1 v in v out r4 r1 r2 v ref r3 az432 v in v out r4 r1 r2 v ref r3 az431l figure17. current source or current limit typical application s
data sheet 11 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited low voltage (1.24v) adjustable precision shunt regulator az431l figure 19. pwm converter with reference figure18. precision 5v 1a regulator az1117 v in 8.2k az431l r1 r2 r3 250 250 5v/1a pwm controller c1 r1 r2 680 u2 3 4 ps521 c2 2 r3 r4 r5 v out az431l q1 comp vfb typical applicat ion (continued)
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 12 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited mechanical dimensions to-92(bulk packing) unit: mm(inch) 2.420(0.095) 2.660(0.105) 0.360(0. 014) 0.760(0. 030) 1. 600(0. 063) max 12.500(0.492) 15.500(0.610) 1.270(0. 050) typ 3.300(0.130) 3.700(0.146) 4.300(0.169) 4.700(0.185) 1.000(0. 039) 1.400(0.055) 4.400(0.173) 4.800(0.189) 3.430(0.135) min 0.320(0. 013) 0.510(0. 020) 0. 000(0.000) 0. 380(0.015)
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 13 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited unit: mm(inch) mechanical dimens ions (continued) unit: mm(inch) to-92(ammo packing) 4.300(0.169) 4.700(0.185) 1 2.500(0.492) 1 4.500(0.571) 2.540(0. 100 ) ty p 1.270(0. 050 ) typ 0. (0. 015) 0. 550 (0.022 ) 4.400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510(0. 020) 0. 000(0.000 ) 0. 380(0. 015 ) max 1. 100(0. 043 1. 400(0. 055 ) 3.300(0.130) 3.800(0.150) 1. 600(0. 063) ) 380 2.500(0. 098 ) 4.000 ( 0.157 ) 13.000(0. 512 ) 15.000 ( 0.591 )
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 14 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sot-23 unit: mm(inch) 2.300(0.091) 2.500(0.098) 1.200(0.047) 1.400(0.055) 0.920(0.036) 0.980(0.039) 0.390(0.015) 0.450(0.018) 1.900(0.075)ref 2.800(0.110) 3.000(0.118) 2.0 3.0 0.500(0.020) 0.700(0.028) 1.050(0.041)ref 0.020(0.001) 0.100(0.004) 0.900(0.035) 1.100(0.043) 4 r0.100(0.004) 7.0 7.0 0.550(0.022)ref 0.200(0.008)min 0.100(0.004) gauge plane 0.080(0.003) 0.150(0.006) r0.100(0.004) 0.0 ~ 10.0
data sheet 15 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited low voltage (1.24v) adjustable precision shunt regulator az431l mechanical dimens ions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
low voltage (1.24v) adjustable precision shunt regulator az431l data sheet 16 aug. 2011 rev. 2. 4 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sot-89 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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